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PSMN1R4-40YLDX Datasheet
Datasheet specifications
| Datasheet's name | PSMN1R4-40YLDX |
|---|---|
| File size | 74.267 KB |
| File type | |
| Number of pages | 13 |
Download Datasheet PSMN1R4-40YLDX |
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Other documentations
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Technical specifications
- RoHS: true
- Type: N Channel
- Category: Triode/MOS Tube/Transistor/MOSFETs
- Datasheet: Nexperia PSMN1R4-40YLDX
- Operating Temperature: -55°C~+175°C@(Tj)
- Power Dissipation (Pd): 238W
- Total Gate Charge (Qg@Vgs): 96nC@10V
- Drain Source Voltage (Vdss): 40V
- Input Capacitance (Ciss@Vds): 6661pF@20V
- Continuous Drain Current (Id): 100A
- Gate Threshold Voltage (Vgs(th)@Id): 2.2V@1mA
- Drain Source On Resistance (RDS(on)@Vgs,Id): 1.4mΩ@10V,25A
- Package: SOT-669
- Manufacturer: Nexperia